Structure produces world's fastest transistor

A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz transistor for high-speed computing and communications applications could now be within reach.

The goal of a terahertz transistor was not possible using the previous device structure, Feng said. "To achieve such speed in a typical HBT, the current density would become so large it would melt the components. In our pseudomorphic HBT, we can operate at higher frequencies with less current density. With this new material structure, a terahertz transistor is achievable."